EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2018

EPC2018

EPC

Description

GANFET N-CH 150V 12A DIE

10 842

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EPC2007

EPC2007

EPC

Description

GANFET N-CH 100V 6A DIE OUTLINE

10 881

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EPC2030ENGRT

EPC2030ENGRT

EPC

Description

GANFET NCH 40V 31A DIE

10 940

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EPC2015

EPC2015

EPC

Description

GANFET N-CH 40V 33A DIE OUTLINE

10 862

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EPC2012

EPC2012

EPC

Description

GANFET N-CH 200V 3A DIE

10 938

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EPC2001

EPC2001

EPC

Description

GANFET N-CH 100V 25A DIE OUTLINE

10 831

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EPC2010

EPC2010

EPC

Description

GANFET N-CH 200V 12A DIE

10 837

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EPC2014

EPC2014

EPC

Description

GANFET N-CH 40V 10A DIE OUTLINE

10 991

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EPC2105ENGRT

EPC2105ENGRT

EPC

Description

GANFET 2NCH 80V 9.5A DIE

10 898

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EPC2106ENGRT

EPC2106ENGRT

EPC

Description

GAN TRANS 2N-CH 100V BUMPED DIE

10 966

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