EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2206

EPC2206

EPC

Description

GANFET N-CH 80V 90A DIE

17 988

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EPC2031

EPC2031

EPC

Description

GANFET NCH 60V 31A DIE

53 273

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EPC2024

EPC2024

EPC

Description

GANFET NCH 40V 60A DIE

15 507

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EPC2001C

EPC2001C

EPC

Description

GANFET N-CH 100V 36A DIE OUTLINE

90 134

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EPC2019

EPC2019

EPC

Description

GANFET N-CH 200V 8.5A DIE

57 743

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EPC2212

EPC2212

EPC

Description

GANFET N-CH 100V 18A DIE

47 999

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EPC2216

EPC2216

EPC

Description

GANFET N-CH 15V 3.4A DIE

19 449

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EPC2007C

EPC2007C

EPC

Description

GANFET N-CH 100V 6A DIE OUTLINE

35 043

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EPC2045

EPC2045

EPC

Description

GANFET N-CH 100V 16A DIE

55 830

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EPC2214

EPC2214

EPC

Description

AEC-Q101 GAN FET 80V 20 MOHM

25 185

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