WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconductors is registered at Nanchang city which is the capital city of Jiangxi province, China. It fully owns subsidiaries and branches in Jilin city for bipolar production, in Shanghai and the United Kingdom for R&D and production support, in Hong Kong for Sales activities, and in many other countries for sales and customer services, respectively.

As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing.

The NXP Bi-Polar Division product portfolio (Diodes, Thyristors & Transistors) has been transferred to WeEn Semiconductors (Jan 19, 2017).

WND08P16DJ

WND08P16DJ

WeEn Semiconductors Co., Ltd

Description

STANDARD POWER DIODE

19 959

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NXPSC066506Q

NXPSC066506Q

WeEn Semiconductors Co., Ltd

Description

DIODE SCHOTTKY 650V 6A TO220AC

13 820

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BYC15-600,127

BYC15-600,127

WeEn Semiconductors Co., Ltd

Description

DIODE GEN PURP 500V 15A TO220AC

15 035

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BYT79X-600PQ

BYT79X-600PQ

WeEn Semiconductors Co., Ltd

Description

DIODE GEN PURP 600V 15A TO220F

15 802

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BYC8X-600,127

BYC8X-600,127

WeEn Semiconductors Co., Ltd

Description

DIODE GEN PURP 600V 8A TO220FP

14 833

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WNSC08650T6J

WNSC08650T6J

WeEn Semiconductors Co., Ltd

Description

SILICON CARBIDE POWER DIODE

13 818

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BYT79X-600,127

BYT79X-600,127

WeEn Semiconductors Co., Ltd

Description

DIODE GEN PURP 600V 15A TO220F

15 344

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MUR860J

MUR860J

WeEn Semiconductors Co., Ltd

Description

ULTRAFAST POWER DIODE

12 533

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NXPSC04650B6J

NXPSC04650B6J

WeEn Semiconductors Co., Ltd

Description

DIODE SCHOTTKY 650V 4A D2PAK

14 169

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WNSC10650T6J

WNSC10650T6J

WeEn Semiconductors Co., Ltd

Description

SILICON CARBIDE POWER DIODE

13 858

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